BFQ72 Siemens Semiconductor Group, BFQ72 Datasheet

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BFQ72

Manufacturer Part Number
BFQ72
Description
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
Manufacturer
Siemens Semiconductor Group
Datasheet
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 72
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
2)
3)
For low-distortion broadband amplifiers up to 2 GHz
at collector currents from 10 mA to 30 mA.
Hermetically sealed ceramic package.
HiRel/Mil screening available.
CECC-type available: CECC 50002/263.
For detailed dimensions see chapter Package Outlines.
Package mounted on alumina 15 mm 16.7 mm 0.7 mm.
T
S
is measured on the collector lead at the soldering point to the pcb.
Marking
72
2)
3)
S
BE
112 ˚C
= 0
Ordering Code
(tape and reel)
Q62702-F776
3)
Symbol
V
V
V
V
I
I
P
T
T
T
R
R
C
B
j
A
stg
CE0
CES
CB0
EB0
tot
th JA
th JS
Pin Configuration
B
1
Values
15
20
20
2.5
50
10
350
175
– 65 … + 175
– 65 … + 175
E
2
260
180
C
3
E
4
Unit
V
mA
mW
˚C
K/W
Package
Cerec-X
BFQ 72
1)

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BFQ72 Summary of contents

Page 1

NPN Silicon RF Transistor For low-distortion broadband amplifiers GHz at collector currents from mA. Hermetically sealed ceramic package. HiRel/Mil screening available. CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions! ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC Characteristics Collector-emitter breakdown voltage = 1 mA Collector-emitter cutoff current = Collector-base cutoff ...

Page 3

Electrical Characteristics ˚C, unless otherwise specified. A Parameter AC Characteristics Transition frequency = 25 mA 200 MHz mA ...

Page 4

Total power dissipation tot *Package mounted on alumina Collector-base capacitance MHz Transition frequency ...

Page 5

Common Emitter Noise Parameters min p min GHz mA 0.01 1.0 – mA ...

Page 6

Circles of constant noise figure -plane mA 800 MHz ) Noise figure Power gain ...

Page 7

Common Emitter Power Gain Power gain 21e 200 MHz Power gain 21e ...

Page 8

Power gain ( 21e = 10 mA Power gain (f) ma ...

Page 9

Common Emitter S Parameters GHz MAG ANG = 15 mA 0.1 0.62 – 78 0.2 0.57 – 121 0.3 0.56 – 142 0.4 0.57 – 155 ...

Page 10

Common Emitter S Parameters (continued GHz MAG ANG = 25 mA 0.1 0.54 – 99 0.2 0.55 – 137 0.3 0.55 – 154 0.4 0.57 – ...

Page 11

Common Emitter S Parameters (continued GHz MAG ANG = 50 mA 0.1 0.51 – 126 0.2 0.55 – 154 0.3 0.55 – 166 0.4 0.58 – ...

Page 12

Common Emitter S Parameters (continued GHz MAG ANG = 10 mA 0.1 0.69 – 59 0.2 0.61 – 100 0.3 0.57 – 124 0.4 0.56 – ...

Page 13

Common Emitter S Parameters (continued GHz MAG ANG = 25 mA 0.1 0.55 – 90 0.2 0.53 – 131 0.3 0.52 – 150 0.4 0.54 – ...

Page 14

Common Emitter S Parameters (continued GHz MAG ANG = 40 mA 0.1 0.51 – 108 0.2 0.52 – 144 0.3 0.53 – 159 0.4 0.54 – ...

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