BFQ82 Siemens Semiconductor Group, BFQ82 Datasheet

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BFQ82

Manufacturer Part Number
BFQ82
Description
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Manufacturer
Siemens Semiconductor Group
Datasheet
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 82
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f 10 MHz
Base current
Peak base current, f 10 MHz
Total power dissipation, T
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case
1)
2)
3)
For low-noise, high-gain amplifiers up to 2 GHz.
Linear broadband applications at collector currents
up to 40 mA.
Hermetically sealed ceramic package.
f
F = 1.1 dB at 800 MHz
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm 16.7 mm 0.7 mm.
T
T
S
= 8 GHz
is measured on the collector lead at the soldering point to the pcb.
3)
Marking
82
2)
S
BE
95 ˚C
= 0
Ordering Code
(tape and reel)
Q62702-F1189
3)
Symbol
V
V
V
V
I
I
I
I
P
T
T
T
R
R
C
CM
B
BM
j
A
stg
CE0
CES
CB0
EB0
tot
th JA
th JS
Pin Configuration
B
1
Values
12
20
20
2
80
80
10
10
500
175
– 65 … + 175
– 65 … + 175
E
2
240
160
C
3
E
4
Unit
V
mA
mW
˚C
K/W
Package
Cerec-X
BFQ 82
1)

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BFQ82 Summary of contents

Page 1

NPN Silicon RF Transistor For low-noise, high-gain amplifiers GHz. Linear broadband applications at collector currents mA. Hermetically sealed ceramic package GHz 1 800 MHz ESD: Electrostatic ...

Page 2

Electrical Characteristics ˚C, unless otherwise specified. A Parameter DC Characteristics Collector-emitter breakdown voltage = 1 mA Collector-emitter cutoff current = Collector-base cutoff ...

Page 3

Electrical Characteristics ˚C, unless otherwise specified. A Parameter AC Characteristics Transition frequency = 5 mA 500 MHz mA ...

Page 4

Total power dissipation tot * Package mounted on alumina Collector-base capacitance MHz Transition frequency 500 MHz = ...

Page 5

Common Emitter Noise Parameters ( min p min GHz mA 0.01 1 – 0.8 1.15 15.7 2.0 2.3 9 ...

Page 6

Noise figure Power gain 800 MHz Lopt Noise figure Power gain (G) ...

Page 7

Common Emitter Power Gain Power gain 21e 200 MHz Power gain ...

Page 8

Power gain 21e = 5 mA Power gain 21e = 30 mA, V ...

Page 9

Common Emitter S Parameters GHz MAG ANG = 10 mA 0.10 0.549 – 117.0 0.15 0.598 – 136.2 0.20 0.620 – 147.9 0.25 0.633 – 155.9 ...

Page 10

Common Emitter S Parameters (continued GHz MAG ANG = 5 mA 0.10 0.783 – 48.9 0.15 0.763 – 68.9 0.20 0.745 – 85.7 0.25 0.732 – ...

Page 11

Common Emitter S Parameters (continued GHz MAG ANG = 10 mA 0.10 0.670 – 68.9 0.15 0.664 – 92.4 0.20 0.661 – 109.9 0.25 0.660 – ...

Page 12

Common Emitter S Parameters (continued GHz MAG ANG = 30 mA 0.10 0.545 – 111.4 0.15 0.584 – 132.2 0.20 0.605 – 145.0 0.25 0.617 – ...

Page 13

Common Emitter S Parameters (continued GHz MAG ANG = 50 mA 0.10 0.541 – 128.9 0.15 0.587 – 145.8 0.20 0.609 – 155.7 0.25 0.622 – ...

Page 14

Common Emitter S Parameters (continued GHz MAG ANG = 5 mA 0.10 0.792 – 47.3 0.15 0.771 – 67.0 0.20 0.751 – 83.6 0.25 0.736 – ...

Page 15

Common Emitter S Parameters (continued GHz MAG ANG = 10 mA 0.10 0.686 – 65.8 0.15 0.673 – 89.1 0.20 0.665 – 106.6 0.25 0.661 – ...

Page 16

Common Emitter S Parameters (continued GHz MAG ANG = 30 mA 0.10 0.559 – 105.0 0.15 0.585 – 127.1 0.20 0.600 – 140.8 0.25 0.610 – ...

Page 17

Common Emitter S Parameters (continued GHz MAG ANG = 50 mA 0.10 0.548 – 120.2 0.15 0.582 – 139.4 0.20 0.599 – 150.9 0.25 0.610 – ...

Page 18

Common Emitter Large Signal Parameters Linear output voltage dB 806 MHz 810 MHz Note: The transistor ...

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