BFM505 Philips Semiconductors, BFM505 Datasheet - Page 5

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BFM505

Manufacturer Part Number
BFM505
Description
Dual NPN wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
Fig.2
V
Fig.4
(mW)
CE
P tot
h FE
250
200
150
100
= 6 V.
600
400
200
50
0
0
10
0
Power derating as a function of soldering
point temperature; typical values.
DC current gain as a function of collector
current; typical values.
3
double loaded
single loaded
10
2
50
10
1
100
1
150
10
T s (
I C (mA)
MBG208
MRA719
o
C)
200
10
2
5
handbook, halfpage
handbook, halfpage
(GHz)
f = 1 GHz; T
Fig.3
I
Fig.5
C
f T
(pF)
= 0; f = 1 MHz.
C re
12
0.4
0.3
0.2
0.1
0
8
4
10
0
0
1
Transition frequency as a function of
collector current; typical values.
Feedback capacitance as a function of
collector-base voltage; typical values.
amb
= 25 C.
2
4
1
V CE = 6V
6
3 V
I C (mA)
Product specification
8
V CB (V)
BFM505
MGD687
MRA720
10
10

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