NESG2021M16-T3 California Micro Devices Corp, NESG2021M16-T3 Datasheet
NESG2021M16-T3
Manufacturer Part Number
NESG2021M16-T3
Description
NPN SiGe HIGH FREQUENCY TRANSISTOR
Manufacturer
California Micro Devices Corp
Datasheet
1.NESG2021M16-T3.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS
Notes:
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
• LOW NOISE FIGURE:
• HIGH MAXIMUM STABLE GAIN:
• LOW PROFILE M16 PACKAGE:
FEATURES
V
NF = 0.9 dB at 2 GHz
NF = 1.3 dB at 5.2 GHz
MSG = 22.5 dB at 2 GHz
6-pin lead-less minimold
CEO
1. MSG =
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
SYMBOLS
|S
= 5 V (Absolute Maximum)
MSG
OIP
P
I
I
h
C
NF
NF
CBO
EBO
G
G
21E
1dB
f
FE
T
re
a
a
3
|
2
S
S
21
12
Noise Figure at V
Z
Associated Gain at V
Z
Noise Figure at V
Z
Associated Gain at V
Z
Maximum Stable Gain
Insertion Power Gain at V
Output Power at 1dB Compression Point at
V
Output 3rd Order Intercept Point at V
Gain Bandwidth Product at V
Reverse Transfer Capacitance
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
S
S
S
S
CE
HIGH FREQUENCY TRANSISTOR
= Z
= Z
= Z
= Z
= 3 V, I
SOPT
SOPT
SOPT
SOPT
, ZL = Z
, ZL = Z
, ZL = Z
, ZL = Z
CQ
= 12 mA, f = 2 GHz
PARAMETERS AND CONDITIONS
3
CE
CE
at V
LOPT
LOPT
LOPT
LOPT
= 2 V, I
= 2 V, I
CE
CE
PACKAGE OUTLINE
1
CE
at V
= 2 V, I
= 2 V, I
PART NUMBER
= 2 V, I
CE
EB
C
C
CE
CB
= 3 V, I
CE
= 3 mA, f = 5.2 GHz,
= 3 mA, f = 2 GHz,
= 1 V, I
(T
2
= 3 V, I
C
C
= 5V, I
= 3 V, I
at V
C
A
= 3 mA, f = 5.2 GHz,
= 3 mA, f = 2 GHz,
= 5 mA
= 25°C)
C
CB
C
CE
C
= 10 mA, f = 2 GHz
E
= 0
C
= 2 V, I
= 10 mA, f = 2 GHz
= 0
= 3 V, I
= 10 mA, f = 2 GHz
NEC's NPN SiGe
E
CQ
= 0 mA, f = 1 GHz
= 12 mA, f = 2 GHz dBm
DESCRIPTION
NEC's NESG2021M16 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifi ers,
me di um power amplifi ers, and oscillators.
M16
California Eastern Laboratories
UNITS
dBm
GHz
dB
dB
dB
dB
dB
dB
pF
nA
nA
15.0
20.0
17.0
MIN
130
NESG2021M16
20
NESG2021M16
M16
TYP
10.0
18.0
22.5
19.0
190
1.3
0.9
0.1
17
25
9
MAX
100
100
260
1.2
0.2
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NESG2021M16-T3 Summary of contents
Page 1
... Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ NEC's NPN SiGe M16 DESCRIPTION NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifi ers power amplifi ers, and oscillators. ...
Page 2
... PCB. ORDERING INFORMATION PART NUMBER QUANTITY SUP PLY ING FORM NESG2021M16- pcs Pin 1 (Collector), Pin 6 reel (Emitter) face the perforation side of the tape Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...