BFP136 Siemens Semiconductor Group, BFP136 Datasheet

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BFP136

Manufacturer Part Number
BFP136
Description
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)
Manufacturer
Siemens Semiconductor Group
Datasheet

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NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For power amplifier in DECT and PCN systems
• f
• Gold metalization for high reliability
Type
BFP 136W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
S
T
S
= 5.5GHz
is measured on the collector lead at the soldering point to the pcb.
60 °C
Marking Ordering Code
PAs
Q62702-F1575
1)
1
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
Pin Configuration
1 = E
2 = C
3 = E
- 65 ... + 150
- 65 ... + 150
Values
1000
150
150
12
20
20
20
2
90
4 = B
BFP 136W
Package
SOT-343
Jan-20-1997
Unit
V
mA
mW
°C
K/W

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BFP136 Summary of contents

Page 1

NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • 5.5GHz T • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BFP 136W PAs Q62702-F1575 ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.5813 fA VAF = 12.331 1.4254 - VAR = 31.901 1.8821 - RBM = 1.0078 CJE = 33.904 ...

Page 5

Total power dissipation P * Package mounted on epoxy 1200 mW 1000 P tot 900 800 700 600 T A 500 400 300 200 100 Permissible Pulse Load thJS K/W ...

Page 6

Collector-base capacitance 1MHz 2.0 1.5 1.0 0.5 0 Power Gain 0.9GHz ...

Page 7

Power Gain Parameter 18 I =80mA ...

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