BFP181R Siemens Semiconductor Group, BFP181R Datasheet
BFP181R
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BFP181R Summary of contents
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NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • 8GHz 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...
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SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.0010519 fA VAF = 22.403 1.7631 - VAR = 5.1127 1.6528 - RBM = 6.6315 CJE = 1.8168 ...
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Total power dissipation P * Package mounted on epoxy 200 mW 160 P tot 140 120 100 Permissible Pulse Load thJS K ...
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Collector-base capacitance 1MHz 0.24 0.20 0.16 0.12 0.08 0.04 0. Power Gain ...
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Power Gain Parameter 22 I =5mA ...