BFP194 Siemens Semiconductor Group, BFP194 Datasheet

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BFP194

Manufacturer Part Number
BFP194
Description
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
Manufacturer
Siemens Semiconductor Group
Datasheet
PNP Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For low distortion broadband amplifiers in
Type
BFP 194
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
S
S
is measured on the collector lead at the soldering point to the pcb.
77 °C
Marking Ordering Code
RKs
Q62702-F1347
1)
1
Symbol
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CBO
EBO
tot
thJS
Pin Configuration
1 = C
2 = E
3 = B
- 65 ... + 150
- 65 ... + 150
Values
100
700
150
15
20
10
3
105
4 = E
Package
SOT-143
Dec-13-1996
BFP 194
Unit
V
mA
mW
°C
K/W

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BFP194 Summary of contents

Page 1

PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BFP 194 ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current Emitter-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.574 fA VAF = 9.1007 0.841 - VAR = 1.7871 1.6 - RBM = 4.1356 CJE = 17.699 ...

Page 5

Total power dissipation P * Package mounted on epoxy 800 mW P tot 600 500 400 T A 300 200 100 Permissible Pulse Load K/W R thJS ...

Page 6

Collector-base capacitance 1MHz 3.0 2.5 2.0 1.5 1.0 0.5 0 Power Gain ...

Page 7

Power Gain Parameter 14 I =70mA ...

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