BLT52 Philips Semiconductors, BLT52 Datasheet - Page 3
BLT52
Manufacturer Part Number
BLT52
Description
UHF power transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BLT52.pdf
(12 pages)
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Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
1998 Jan 28
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-mb
UHF power transistor
T
mb
10
(A)
I C
= 60 C.
10
1
1
1
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to mounting base
Fig.2 DC SOAR.
PARAMETER
10
PARAMETER
V CE (V)
MGM485
10
2
open emitter
open base
open collector
T
mb
60 C
3
CONDITIONS
P
tot
= 13 W; T
CONDITIONS
mb
60 C
65
MIN.
20
10
3
2.5
13
+150
200
Product specification
VALUE
MAX.
8
BLT52
V
V
V
A
W
C
C
UNIT
UNIT
K/W