BLT70 Philips Semiconductors, BLT70 Datasheet - Page 5

• Manufacturer Part Number: BLT70
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
APPLICATION INFORMATION
RF performance at T
Note
1. T
Ruggedness in class-AB operation
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: f = 900 MHz; V
1996 Feb 06
handbook, halfpage
UHF power transistor
f = 900 MHz; V
MODE OF OPERATION
(dB)
Fig.5
G p
s
is the temperature at the soldering point of the collector pin.
10
8
6
4
2
0
CW, class-AB
0
Power gain and collector efficiency as
functions of load power; typical values.
CE
0.2
= 4.8 V; I
s
G p
C
CQ
60 C in a common emitter test circuit (see note 1 and Fig.7).
0.4
= 0.01 mA; T
0.6
CE
s
(MHz)
900
60 C.
= 6.5 V; P
0.8
f
P L (W)
MGD200
1.0
L
100
80
60
40
20
0
(%)
= 0.5 W; T
C
V
4.8
(V)
CE
5
s
handbook, halfpage
60 C.
f = 900 MHz; V
(mA)
(W)
0.01
P L
I
CQ
1.0
0.8
0.6
0.4
0.2
Fig.6
0
0
CE
Load power as a function of input
power; typical values.
= 4.8 V; I
(W)
0.6
P
L
CQ
= 0.01 mA; T
100
typ. 8.1
(dB)
G
P IN (mW)
s
6
p
Product specification
60 C.
MGD201
BLT70
200
typ. 73
(%)
60
C