BFY280 Siemens Semiconductor Group, BFY280 Datasheet - Page 2

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BFY280

Manufacturer Part Number
BFY280
Description
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
Manufacturer
Siemens Semiconductor Group
Datasheet
Electrical Characteristics
Table 2
Parameter
Collector-base cutoff current
V
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
Emitter-base cutoff current
V
Base-emitter forward voltage
I
DC current gain
I
3)
Semiconductor Group
E
C
CB
CE
CB
EB
EB
= 5 mA,
This test assures
= 0.25 mA,
= 10 V,
= 8 V,
= 8 V,
= 2 V,
= 1 V,
I
I
I
I
I
B
E
C
C
C
I
E
= 0.1 m A
= 0
= 0
= 0
= 0
DC Characteristics at
V
= 0
CE
V
(BR)CE0
= 1 V
3)
> 8 V.
Symbol
I
I
I
I
I
V
h
CBO
CEX
CBO
EBO
EBO
FE
FBE
T
A
= 25 ° C unless otherwise specified
2
min.
-
-
-
-
-
-
30
Limit Values
typ.
-
-
-
-
-
-
100
Draft A03 1998-04-01
max.
100
100
50
25
0.5
1
175
BFY 280
Unit
m A
m A
nA
m A
m A
V
-

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