BF485PN Philips Semiconductors, BF485PN Datasheet - Page 3

• Manufacturer Part Number: BF485PN
• Description: NPN/PNP high voltage transistors
• Manufacturer: Philips Semiconductors

www.DataSheet4U.com
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
2000 Aug 02
handbook, halfpage
R
Per transistor; for the PNP transistor with negative polarity
I
I
h
V
V
C
f
amb
CBO
EBO
T
FE
SYMBOL
SYMBOL
CEsat
BEsat
NPN/PNP high voltage transistors
th j-a
c
TR1 (NPN); V
(1) T
(2) T
(3) T
Fig.2
= 25 C unless otherwise specified.
h FE
300
200
100
amb
amb
amb
0
10
1
= 150 C.
= 25 C.
= 55 C.
DC current gain as a function of collector
current: typical values.
CE
from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
saturation voltage
collector capacitance
transition frequency
= 10 V.
1
(1)
(2)
(3)
PARAMETER
PARAMETER
10
I C (mA)
MLD391
10
in free air; note 1
I
I
I
I
I
I
I
I
I
2
E
E
C
C
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= 1 mA; V
= 30 mA; V
= 20 mA; I
= 20 mA; I
= I
= 10 mA; V
e
= 0; V
CB
CB
EB
3
= 300 V;
= 250 V; T
= 5 V
CE
CB
B
B
handbook, halfpage
CE
CE
= 2 mA
= 2 mA
CONDITIONS
CONDITIONS
= 10 V
= 20 V; f = 1 MHz
TR1 (NPN).
(1) I
(2) I
(3) I
(4) I
Fig.3
= 10 V
= 20 V; f = 100 MHz
(mA)
200
I C
150
100
50
B
B
B
B
0
= 30 mA.
= 27 mA.
= 24 mA.
= 21 mA.
j
0
= 150 C
(6)
Collector current as a function of
collector-emitter voltage; typical values.
(5)
2
(4)
(5) I
(6) I
(7) I
(3)
B
B
B
4
= 18 mA.
= 15 mA.
= 12 mA.
(2)
6
60
50
50
(10)
MIN.
(1)
(7)
(8)
(9)
VALUE
208
Product specification
(8) I
(9) I
(10) I
BF485PN
8
B
B
B
50
50
100
250
850
6
V CE (V)
MAX.
= 9 mA.
= 6 mA.
= 3 mA.
MLD392
10
2
UNIT
K/W
.
nA
nA
mV
mV
pF
MHz
UNIT
A