TN1625-G STMicroelectronics, TN1625-G Datasheet - Page 3

• Manufacturer Part Number: TN1625-G
• Description: SCR
• Manufacturer: STMicroelectronics

Fig. 1: Maximum average power dissipation ver-
sus average on-state current .
Fig. 3: Average and D.C. on-state current versus
case temperature.
Fig. 5: Relative variation of gate trigger currentand
holding current versus junction temperature.
P(W)
16
14
12
10
I
18
16
14
12
10
I ,I [Tj]/I ,I [Tj=25 C]
2.5
2.0
1.5
1.0
0.5
0.0
T(AV)
GT H
8
6
4
2
0
8
6
4
2
0
-40
0
0
(A)
I
-20
H
I
2
GT H
GT
25
=30
0
4
D.C.
=180
20
=60
6
50
Tcase( C)
I
=90
T(AV)
40
Tj( C)
(A)
8
=120
60
75
10
=180
80
12
100
100
120
14
D.C.
125
140
16
Fig. 2 : Correlation between maximum average
power dissipation and maximum allowable tem-
peratures (T
resistances heatsink+contact.
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
P(W)
16
14
12
10
I
200
160
120
K=[Zth/Rth]
1.00
0.10
0.01
TSM
8
6
4
2
0
80
40
0
0
1E-3
(A)
1
Rth=6 C/W
20
=180
1E-2
amb
40
Rth=4 C/W
Zth(j-c)
and T
10
1E-1
Number of cycles
60
Tamb( C)
case
Rth=2 C/W
tp(s)
1E+0
80
) for different thermal
100
100
1E+1
Rth=0 C/W
Zth(j-a)
Tcase ( C)
120
Tj initial=25 C
F=50Hz
TN1625-G
1E+2 5E+2
140
1000
110
115
120
125
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