CR02 Mitsubishi Electric Semiconductor, CR02 Datasheet - Page 4

• Manufacturer Part Number: CR02
• Description: LOW POWER USE PLANAR PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

160
140
120
100
160
140
120
100
160
140
120
100
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
ALLOWABLE AMBIENT TEMPERATURE VS.
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
(SINGLE-PHASE FULL WAVE)
0.1
0.1
= 30° 60°
(RECTANGULAR WAVE)
= 30°
0.1
NATURAL
CONVECTION
0.2
0.2
60°
90°
0.2
= 30°
RESISTIVE LOADS
NATURAL
CONVECTION
90°
60°
120°
0.3
0.3
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
120°
90°
360°
RESISTIVE,
INDUCTIVE
LOADS
120°
360°
0.3
180°
180°
0.4
0.4
180°
360°
270°
DC
0.4
0.5
0.5
MITSUBISHI SEMICONDUCTOR THYRISTOR
160
140
120
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
MAXIMUM AVERAGE POWER DISSIPATION
MAXIMUM AVERAGE POWER DISSIPATION
80
60
40
20
0
0
0
–40
0
0
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
–20
JUNCTION TEMPERATURE (°C)
(SINGLE-PHASE FULL WAVE)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
0.1
0.1
(RECTANGULAR WAVE)
0
= 30°
20
= 30°
60°
0.2
0.2
40
PLANAR PASSIVATION TYPE
90°
TYPICAL EXAMPLE
60°
60
RESISTIVE LOADS
120°
0.3
0.3
80
90°
180°
RESISTIVE,
INDUCTIVE
LOADS
100
120°
360°
R
LOW POWER USE
270°
GK
120 140
0.4
0.4
180°
360°
= 1k
DC
CR02AM
160
0.5
0.5
Feb.1999