CR02AM-8A Mitsubishi Electric Semiconductor, CR02AM-8A Datasheet - Page 5

• Manufacturer Part Number: CR02AM-8A
• Description: LOW POWER USE GLASS PASSIVATION TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

10
120
100
160
140
120
100
10
10
10
80
60
40
20
REPETITIVE PEAK REVERSE VOLTAGE VS.
60
40
20
80
–1
10
0
7
5
3
2
7
5
3
2
7
5
3
2
0
2
1
0
–60
–40 –20
GATE TO CATHODE RESISTANCE (k )
–1
GATE TO CATHODE RESISTANCE
TYPICAL EXAMPLE
–40
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
2 3
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
–20
HOLDING CURRENT VS.
DISTRIBUTION
0
5 710
20
0 20 40
0
40
2 3 5 710
TYPICAL EXAMPLE
TYPICAL EXAMPLE
60
T
I
I
H
GT
j
= 25°C
(25°C) = 1mA
60
80
(25°C) = 25µA
100
80 100120 140
T
1
j
= 125°C
2 3 5 7 10
120
140
160
2
MITSUBISHI SEMICONDUCTOR THYRISTOR
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
120
100
500
400
300
200
100
10
10
10
80
60
40
20
0
RATE OF RISE OF OFF-STATE VOLTAGE
10
10
7
5
4
3
2
7
5
4
3
2
0
3
2
1
10
GATE TO CATHODE RESISTANCE (k )
TYPICAL EXAMPLE
# 1 I
# 2 I
T
0
–1
T
GATE CURRENT PULSE WIDTH (µs)
T
0
GATE TO CATHODE RESISTANCE
j
j
j
= 125°C, R
2 3
= 25°C
GATE CURRENT PULSE WIDTH
= 25°C
2 3
GATE TRIGGER CURRENT VS.
BREAKOVER VOLTAGE VS.
GT
GT
2 3
HOLDING CURRENT VS.
# 1
5 7 10
(25°C) = 10µA
(25°C) = 66µA
5 710
4
# 2
5
GK
1
0
TYPICAL EXAMPLE
# 1 13µA
# 2 59µA
# 1
7 10
2 3 5 7 10
2 3 5 7 10
= 1k
I
# 2
GT
TYPICAL EXAMPLE
GLASS PASSIVATION TYPE
1
(25°C)
# 1
# 2
2 3 4 5 7 10
CR02AM-8A
2
1
LOW POWER USE
# 1
# 2
I
I
1.6mA
1.8mA
2 3 5 7 10
GT
H
2 3 5 7 10
10µA
66µA
(1k )
(25°C)
3
2
2
Feb.1999