CR02AM-8A Mitsubishi Electric Semiconductor, CR02AM-8A Datasheet - Page 5
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CR02AM-8A
Manufacturer Part Number
CR02AM-8A
Description
LOW POWER USE GLASS PASSIVATION TYPE
Manufacturer
Mitsubishi Electric Semiconductor
Datasheet
1.CR02AM-8A.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
10
120
100
160
140
120
100
10
10
10
80
60
40
20
REPETITIVE PEAK REVERSE VOLTAGE VS.
60
40
20
80
–1
10
0
7
5
3
2
7
5
3
2
7
5
3
2
0
2
1
0
–60
–40 –20
GATE TO CATHODE RESISTANCE (k )
–1
GATE TO CATHODE RESISTANCE
TYPICAL EXAMPLE
–40
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
2 3
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
–20
HOLDING CURRENT VS.
DISTRIBUTION
0
5 710
20
0 20 40
0
40
2 3 5 710
TYPICAL EXAMPLE
TYPICAL EXAMPLE
60
T
I
I
H
GT
j
= 25°C
(25°C) = 1mA
60
80
(25°C) = 25µA
100
80 100120 140
T
1
j
= 125°C
2 3 5 7 10
120
140
160
2
MITSUBISHI SEMICONDUCTOR THYRISTOR
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
120
100
500
400
300
200
100
10
10
10
80
60
40
20
0
RATE OF RISE OF OFF-STATE VOLTAGE
10
10
7
5
4
3
2
7
5
4
3
2
0
3
2
1
10
GATE TO CATHODE RESISTANCE (k )
TYPICAL EXAMPLE
# 1 I
# 2 I
T
0
–1
T
GATE CURRENT PULSE WIDTH (µs)
T
0
GATE TO CATHODE RESISTANCE
j
j
j
= 125°C, R
2 3
= 25°C
GATE CURRENT PULSE WIDTH
= 25°C
2 3
GATE TRIGGER CURRENT VS.
BREAKOVER VOLTAGE VS.
GT
GT
2 3
HOLDING CURRENT VS.
# 1
5 7 10
(25°C) = 10µA
(25°C) = 66µA
5 710
4
# 2
5
GK
1
0
TYPICAL EXAMPLE
# 1 13µA
# 2 59µA
# 1
7 10
2 3 5 7 10
2 3 5 7 10
= 1k
I
# 2
GT
TYPICAL EXAMPLE
GLASS PASSIVATION TYPE
1
(25°C)
# 1
# 2
2 3 4 5 7 10
CR02AM-8A
2
1
LOW POWER USE
# 1
# 2
I
I
1.6mA
1.8mA
2 3 5 7 10
GT
H
2 3 5 7 10
10µA
66µA
(1k )
(25°C)
3
2
2
Feb.1999