EMT2DXV6T5 ON Semiconductor, EMT2DXV6T5 Datasheet - Page 2

• Manufacturer Part Number: EMT2DXV6T5
• Description: Dual General Purpose Transistor
• Manufacturer: ON Semiconductor

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2. Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Collector−Base Cutoff Current (V
Emitter−Base Cutoff Current (V
Collector−Emitter Saturation Voltage (Note 2)
DC Current Gain (Note 2)
Transition Frequency
Output Capacitance (V
(I
(V
(V
C
CE
CE
= −50 mAdc, I
= −6.0 Vdc, I
= −12 Vdc, I
B
C
C
= −5.0 mAdc)
= −2.0 mAdc, f = 30 MHz)
= −1.0 mAdc)
CB
Characteristic
= −12 Vdc, I
300 ms, D.C.
EB
CB
= −5.0 Vdc, I
E
= −30 Vdc, I
C
= −50 mAdc, I
E
= −50 mAdc, I
C
= 0 Adc, f = 1 MHz)
(T
= −1.0 mAdc, I
2%.
A
= 25 C)
B
E
= 0)
= 0)
E
E
= 0)
= 0)
B
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EMT2DXV6T5
= 0)
2
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
I
I
C
h
CBO
EBO
f
FE
OB
T
−6.0
Min
−60
−50
120
−
−
−
−
−
Typ
140
3.5
−
−
−
−
−
−
−
Max
−0.5
−0.5
−0.5
560
−
−
−
−
−
MHz
Unit
Vdc
Vdc
Vdc
Vdc
nA
mA
pF
−