PBSS2540F Philips Semiconductors, PBSS2540F Datasheet - Page 5
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PBSS2540F
Manufacturer Part Number
PBSS2540F
Description
40 V low V NPN transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS2540F.pdf
(8 pages)
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Philips Semiconductors
2001 Oct 31
handbook, halfpage
40 V low V
(mA)
(1) I
(2) I
(3) I
(4) I
Fig.6
I C
1200
1000
800
600
400
200
B
B
B
B
0
= 25 mA.
= 22.5 mA.
= 20 mA.
= 17.5 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
1
CEsat
(5) I
(6) I
(7) I
B
2
B
B
= 12.5 mA.
= 15 mA.
= 10 mA.
NPN transistor
3
(9)
(1)
(3)
(5)
(7)
(10)
(8) I
(9) I
(10) I
(2)
(4)
(6)
(8)
4
V CE (V)
B
B
B
= 7.5 mA.
= 5.0 mA.
= 2.5 mA.
MHC083
5
5
handbook, halfpage
R CEsat
I
(1) T
(2) T
(3) T
Fig.7
C
/I
( )
B
10
10
10
= 20.
10
amb
amb
amb
10
1
3
2
1
= 150 C.
= 25 C.
= 55 C.
1
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
1
10
PBSS2540F
(1)
(2)
(3)
Product specification
10
2
I C (mA)
MHC087
10
3