PBSS302NZ Philips Semiconductors, PBSS302NZ Datasheet - Page 6

• Manufacturer Part Number: PBSS302NZ
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
7. Characteristics
PBSS302NZ_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 8 September 2006
0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 5.8 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= 0.15 A
= 5 V; I
= 20 V; I
= 20 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 12.5 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
B
B
C
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 40 mA
= 200 mA
= 40 mA
= 100 mA
= 400 mA
C
C
C
C
C
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 290 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 7 A
= 2 A
20 V, 5.8 A NPN low V
= 0 A
= 0 A;
= 100 mA;
= i
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
300
300
250
200
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS302NZ
CEsat
Typ
-
-
-
570
550
520
450
350
20
35
50
70
120
115
155
170
30
38
0.82
0.92
0.75
15
40
55
270
85
355
140
95
(BISS) transistor
Max
100
50
100
-
-
-
-
-
25
50
70
100
170
165
240
250
43
60
0.9
1.05
0.85
-
-
-
-
-
-
-
150
Unit
nA
nA
mV
mV
mV
mV
mV
mV
mV
mV
m
m
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
A
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