PBSS305PX Philips Semiconductors, PBSS305PX Datasheet

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PBSS305PX

Manufacturer Part Number
PBSS305PX
Description
transistor
Manufacturer
Philips Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS305PX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS305PX
Quantity:
49
www.DataSheet4U.com
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DataSheet U .com
DataSheet
1. Product profile
4
4
U
.com
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305NX.
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS305PX
80 V, 4.0 A PNP low V
Rev. 01 — 22 August 2006
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT89
300 s;
0.02.
FE
CEsat
) at high I
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
= 200 mA
= 4 A;
1 ms
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
58
Product data sheet
Max
83
80
4
8
Unit
V
A
A
m

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PBSS305PX Summary of contents

Page 1

... CEsat [ DataSheet DataSheet U .com U .com PBSS305PX 80 V, 4.0 A PNP low V CEsat Rev. 01 — 22 August 2006 Breakthrough In Small Signal (BISS) transistor in a SOT89 CEsat Low collector-emitter saturation voltage V High collector current capability I and I C High collector current gain ( high I FE High effi ...

Page 2

... Description SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads Marking codes * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat Simplified outline Symbol 006aaa231 ...

Page 3

... Ceramic PCB standard footprint 2 3 (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat Conditions Min Max open emitter - 80 open base - 80 open collector - single pulse; ...

Page 4

... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm Device mounted on a ceramic PCB standard footprint Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat Min Typ Max [ 208 [ ...

Page 5

... Product data sheet 4 4 DataSheet DataSheet U .com U .com standard footprint Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat 006aaa558 (s) p 006aaa559 (s) p © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...

Page 6

... 100 MHz collector capacitance MHz Pulse test: t 300 s; 0.02. p Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat Min Typ Max = ...

Page 7

... I (mA (1) T amb (2) T amb (3) T amb Fig 8. Base-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 22 August 2006 PBSS305PX (BISS) transistor CEsat 006aaa635 I (mA) = 600 B 540 480 420 360 300 240 180 120 ...

Page 8

... I (mA) C Fig 10. Collector-emitter saturation voltage as a 006aaa634 R (1) (2) ( (mA) C Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat 006aaa632 10 CEsat ( (1) (2) ( ...

Page 9

... R (probe) oscilloscope 450 12 0. Bon Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform off ...

Page 10

... U .com 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Description SOT89 8 mm pitch tape and reel For further information and the availability of packing methods, see Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 4000 -115 -135 Section 15 ...

Page 11

... SOT89 standard mounting conditions for reflow soldering Dimensions in mm 6.60 2. 1.50 0.70 5.30 Not recommended for wave soldering Dimensions in mm Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x) solder lands solder resist occupied area 3.50 7.60 0.50 1.20 3.00 transport direction during soldering © ...

Page 12

... PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm ceramic PCB standard 2 3 footprint Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 PCB thickness = 1.6 mm Fig 19. FR4 PCB, mounting pad for ...

Page 13

... PBSS305PX_1 Product data sheet 4 4 DataSheet DataSheet U .com U .com Release date Data sheet status 20060822 Product data sheet Rev. 01 — 22 August 2006 PBSS305PX 80 V, 4.0 A PNP low V (BISS) transistor CEsat Change notice Supersedes - - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 22 August 2006 PBSS305PX (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 22 August 2006 Document identifier: PBSS305PX_1 (BISS) transistor All rights reserved. ...

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