PBSS4140S Philips Semiconductors, PBSS4140S Datasheet - Page 2

• Manufacturer Part Number: PBSS4140S
• Description: 40 V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
PNP complement: PBSS5140S.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
2001 Nov 27
PBSS4140S
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
High power dissipation (830 mW)
Ultra low collector-emitter saturation voltage
1 A continuous current
High current switching
Improved device reliability due to reduced heat
generation.
Medium power switching and muting
Linear regulators
DC/DC converter
LCD back-lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
CBO
CEO
EBO
tot
40 V low V
TYPE NUMBER
CEsat
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
transistor in a SOT54 plastic package.
CEsat
PARAMETER
NPN transistor
MARKING CODE
S4140S
open emitter
open base
open collector
T
amb
25 C; note 1
CONDITIONS
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PIN
Fig.1 Simplified outline (SOT54) and symbol.
1
2
3
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
1
base
collector
emitter
2
3
PARAMETER
65
65
MIN.
DESCRIPTION
40
40
5
1
2
1
830
+150
150
+150
Product specification
PBSS4140S
MAX.
MAM459
1
40
1
2
<500
MAX. UNIT
V
V
V
A
A
A
mW
C
C
C
2
3
UNIT
V
A
A
m