PBSS4140T Philips Semiconductors, PBSS4140T Datasheet - Page 5
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PBSS4140T
Manufacturer Part Number
PBSS4140T
Description
40 V/ 1A NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS4140T.pdf
(9 pages)
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Philips Semiconductors
2004 Mar 16
handbook, halfpage
handbook, halfpage
40 V, 1A
NPN low V
V CEsat
V
(1) T
(2) T
(3) T
Fig.2
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
h FE
1000
B
800
600
400
200
= 5 V.
10
10
= 10.
10
amb
amb
amb
amb
amb
amb
0
10
1
3
2
1
= 150 C.
= 25 C.
= 55 C.
= 150 C.
= 25 C.
= 55 C.
1
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
1
10
CEsat
(2)
10
(BISS) transistor
10
2
(3)
10
(1)
(2)
(3)
(1)
2
10
10
3
I C (mA)
3
I C (mA)
MLD660
MLD662
10
10
4
4
5
handbook, halfpage
handbook, halfpage
R CEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
CE
( )
/I
V BE
10
B
10
(V)
10
= 5 V.
= 10.
10
10
amb
amb
amb
amb
amb
amb
10
10
1
1
2
1
1
= 55 C.
= 25 C.
= 150 C.
1
= 150 C.
= 25 C.
= 55 C.
1
Base-emitter voltage as a function of
collector current; typical values.
Equivalent on-resistance as a function of
collector current; typical values.
1
1
10
10
(1)
(3)
10
10
(1)
(2)
(3)
(2)
2
2
PBSS4140T
Product specification
10
10
I C (mA)
3
3
I C (mA)
MLD661
MLD663
10
10
4
4