PBSS4240Y Philips Semiconductors, PBSS4240Y Datasheet - Page 4

• Manufacturer Part Number: PBSS4240Y
• Description: 40V low VCEsat NPN transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Jul 13
I
I
h
V
R
V
V
C
f
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
40 V low V
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
p
CEsat
300 s;
PARAMETER
NPN transistor
0.02.
V
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
I
C
C
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 750 mA; I
= 1 A; I
= 2 A; I
= 500 mA; I
= 2 A; I
= 100 mA; V
= 30 V; I
= 30 V; I
= 4 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
B
B
B
C
C
C
C
C
= 50 mA
= 200 mA
= 200 mA
C
4
CONDITIONS
E
E
E
= 0
= 100 mA
= 500 mA
= 1 A
= 2 A
= 100 mA
B
B
B
B
= 0
= 0; T
= I
CE
= 1 mA
= 50 mA
= 15 mA
= 50 mA; note 1
e
= 10 V; f = 100 MHz
= 0; f = 1 MHz
j
= 150 C
350
300
300
150
100
MIN.
470
450
420
250
45
70
120
130
240
140
15
230
TYP.
PBSS4240Y
Product specification
100
50
100
70
100
180
180
320
<200
1.1
0.75
20
MAX.
nA
nA
mV
mV
mV
mV
mV
m
V
V
pF
MHz
UNIT
A