PBSS4320T Philips Semiconductors, PBSS4320T Datasheet - Page 5
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PBSS4320T
Manufacturer Part Number
PBSS4320T
Description
20 V NPN low VCEsat transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS4320T.pdf
(10 pages)
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Philips Semiconductors
2004 Mar 18
4
handbook, halfpage
handbook, halfpage
20 V NPN low V
V
(1) T
(2) T
(3) T
Fig.2
V BEsat
I
(1) T
(2) T
(3) T
Fig.4
C
(mV)
CE
/I
1400
1000
B
h FE
800
600
400
200
600
200
= 2 V.
= 10.
amb
amb
amb
amb
amb
amb
0
10
10
= 150 C.
= 25 C.
= 55 C.
= 55 C.
= 25 C.
= 150 C.
DC current gain as a function of collector
current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
1
1
1
1
10
10
CEsat
10
10
(1)
(2)
(3)
(1)
(2)
(3)
2
2
transistor
10
10
3
3
I C (mA)
I C (mA)
MLD849
MLD851
10
10
4
4
5
handbook, halfpage
handbook, halfpage
V BEsat
V
(1) T
(2) T
(3) T
Fig.3
I
(1) T
(2) T
(3) T
Fig.5
C
(mV)
CE
/I
1200
(mV)
1400
1000
V BE
B
800
400
600
200
= 2 V.
= 20.
amb
amb
amb
amb
amb
amb
0
10
10
= 55 C.
= 25 C.
= 150 C.
= 55 C.
= 25 C.
= 150 C.
1
Base-emitter voltage as a function of
collector current; typical values.
1
Base-emitter saturation voltage as a
function of collector current; typical values.
1
1
10
10
10
10
(1)
(2)
(3)
(1)
(2)
(3)
2
2
PBSS4320T
Product specification
10
10
3
3
I C (mA)
I C (mA)
MLD850
MLD852
10
10
4
4