PBSS4540Z Philips Semiconductors, PBSS4540Z Datasheet - Page 3

• Manufacturer Part Number: PBSS4540Z
• Description: NPN medium power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Aug 04
R
I
I
h
V
V
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BEon
th j-a
= 25 C unless otherwise specified.
c
NPN medium power transistor
mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
saturation voltage
saturation voltage
base-emitter turn-on voltage I
collector capacitance
transition frequency
p
300 s;
PARAMETER
PARAMETER
0.02.
I
I
I
V
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
E
C
CE
I
I
I
I
= 0; V
= 0; V
= i
= 0; V
= 500 mA; I
= 1 A; I
= 2 A; I
= 5 A; I
= 5 A; I
= 2 A; V
= 500 mA; V
C
C
C
C
= 2 V
= 500 mA
= 1 A; note 1
= 2 A; note 1
= 5 A; note 1
e
= 0; V
CB
CB
EB
B
B
B
B
CE
CONDITIONS
= 30 V
= 30 V; T
= 5 V
= 10 mA
= 200 mA; note 1
= 500 mA; note 1
= 500 mA; note 1
CB
= 2 V
3
B
CE
= 10 V; f = 1 MHz
= 5 mA
note 1
= 5 V; f = 100 MHz 80
CONDITIONS
j
= 150 C
300
300
250
50
1.1
MIN.
VALUE
92
500
500
450
150
65
100
130
300
1.1
0.8
60
120
TYP.
Preliminary specification
PBSS4540Z
100
50
100
120
150
170
400
1.3
70
MAX.
UNIT
2
K/W
. For other
nA
nA
mV
mV
mV
mV
V
V
pF
MHz
UNIT
A