PBSS5120T Philips Semiconductors, PBSS5120T Datasheet - Page 3

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PBSS5120T

Manufacturer Part Number
PBSS5120T
Description
20 V/ 1 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2003 Sep 29
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th j-a
20 V, 1 A
PNP low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
in free air; note 1
in free air; note 2
3
25 C; note 1
25 C; note 2
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
417
260
300
480
+150
150
+150
PBSS5120T
Product specification
20
20
5
1
2
200
MAX.
UNIT
K/W
K/W
V
V
V
A
A
mA
mW
mW
C
C
C
UNIT
2
2
.
.

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