PBSS5140T Philips Semiconductors, PBSS5140T Datasheet - Page 4
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PBSS5140T
Manufacturer Part Number
PBSS5140T
Description
40 V low VCEsat PNP transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS5140T.pdf
(9 pages)
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Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 07
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CEO
EBO
T
FE
CEsat
BEsat
BEon
CEsat
c
40 V low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
PNP transistor
0.02.
V
V
V
V
V
V
V
V
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 500 mA; I
= 1 A; I
= 50 mA; V
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
4
CONDITIONS
B
B
= 100 mA
= 50 mA
C
C
C
C
C
C
C
C
B
E
= 0
= 1 mA
= 100 mA
= 500 mA
= 1 A
= 1 A
CE
B
B
B
= 0
= I
= 0
= 0; T
= 1 mA
= 50 mA
= 50 mA; note 1
= 10 V;
e
= 0; f = 1 MHz
j
= 150 C
300
300
250
160
150
MIN.
300
TYP.
PBSS5140T
Product specification
800
<500
12
MAX.
100
50
100
100
200
250
500
1.1
1
nA
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A