PBSS5250X Philips Semiconductors, PBSS5250X Datasheet - Page 2
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PBSS5250X
Manufacturer Part Number
PBSS5250X
Description
50 V/ 2 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS5250X.pdf
(8 pages)
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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
NPN complement: PBSS4250X.
MARKING
Note
1. * = p : made in Hong Kong
2003 Jun 17
PBSS5250X
SOT89 (SC-62) package
Low collector-emitter saturation voltage V
High collector current capability: I
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
– Inductive load driver (e.g. relays,
50 V, 2 A
PNP low V
* = t : made in Malaysia
* = W : made in China.
and LEDs).
buzzers and motors).
TYPE NUMBER
CEsat
transistor in a SOT89 plastic package.
CEsat
(BISS) transistor
*1L
MARKING CODE
C
and I
CM
CEsat
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
SYMBOL
V
I
I
R
C
CM
CEO
CEsat
PIN
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
Bottom view
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
emitter
collector
base
1
PARAMETER
2
DESCRIPTION
3
Objective specification
MAM297
PBSS5250X
3
160
MAX. UNIT
50
2
5
2
1
m
V
A
A