PBSS5350D Philips Semiconductors, PBSS5350D Datasheet - Page 3

• Manufacturer Part Number: PBSS5350D
• Description: PNP transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
CHARACTERISTICS
T
Note
1. Pulse test t
2000 Mar 08
R
I
I
h
V
V
V
Cc
f
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
th j-a
PNP transistor
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
p
thermal resistance from junction to
ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
collector capacitance
transition frequency
300 s,
0.02.
PARAMETER
PARAMETER
3
in free air;
I
I
I
V
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
C
C
C
E
C
CE
note 1
note 2
I
I
I
= 0; V
= 0; V
= I
= 0; V
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 1 A; V
= 100 mA; V
C
C
C
= 2 V;
= 500 mA
= 1 A; note 1
= 2 A; note 1
e
= 0; V
CB
CB
EB
CONDITIONS
CONDITIONS
B
B
B
= 50 V
= 50 V; T
= 5 V
CE
CB
= 50 mA
= 200 mA; note 1
= 200 mA; note 1
= 2 V; note 1
B
= 10 V;
CE
= 50 mA
= 5 V;
j
= 150 C
200
200
100
100
MIN.
VALUE
PBSS5350D
Product specification
208
160
40
MAX.
100
50
100
100
180
300
1.2
1.1
2
2
UNIT
K/W
K/W
.
.
nA
nA
mV
mV
mV
V
V
pF
MHz
UNIT
A