PBSS8110S Philips Semiconductors, PBSS8110S Datasheet - Page 3

• Manufacturer Part Number: PBSS8110S
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2004 Aug 13
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
B
j
amb
stg
CBO
CEO
EBO
tot
th j-a
100 V, 1 A
NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
operating ambient temperature
storage temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
(BISS) transistor
PARAMETER
open emitter
open base
open collector
T
T
j max
amb
3
25 C; note 1
CONDITIONS
in free air; note 1
CONDITIONS
65
65
MIN.
VALUE
150
120
100
5
1
3
300
830
150
+150
+150
PBSS8110S
Product specification
MAX.
UNIT
K/W
V
V
V
A
A
mA
mW
C
C
C
UNIT