PBSS8110X Philips Semiconductors, PBSS8110X Datasheet - Page 4

• Manufacturer Part Number: PBSS8110X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
9397 750 14956
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB; standard footprint
duty cycle =
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.75
0.33
10
4
Table 6:
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
3
10
2
Rev. 01 — 11 May 2005
10
1
2
O
3
Conditions
in free air
, standard footprint.
100 V, 1 A NPN low V
1
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
[2]
[3]
Min
-
-
-
-
PBSS8110X
CEsat
10
2
Typ
-
-
-
-
(BISS) transistor
t
p
006aaa409
(s)
Max
227
89
63
16
10
3
2
.
Unit
K/W
K/W
K/W
K/W
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