VEC2415 Sanyo Semicon Device, VEC2415 Datasheet - Page 2

• Manufacturer Part Number: VEC2415
• Description: N-Channel Silicon MOSFET
• Manufacturer: Sanyo Semicon Device

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Continued from preceding page.
Package Dimensions
unit : mm (typ)
7012-002
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
8
V IN
1
Parameter
7
2
2.9
6 5
0.65
3
V IN
50Ω
4
G
0.3
V DD =30V
D
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
S
0.15
I D =1.5A
R L =20Ω
VEC2415
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
I D =1.5A, V GS =10V
I D =0.75A, V GS =4.5V
I D =0.75A, V GS =4V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =30V, V GS =10V, I D =3A
V DS =30V, V GS =10V, I D =3A
V DS =30V, V GS =10V, I D =3A
I S =3A, V GS =0V
VEC2415
Conditions
Electrical Connection
1
8
7
2
6
3
min
5
4
Ratings
typ
0.81
505
7.3
7.5
1.6
2.1
62
76
83
57
37
41
22
10
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
max
106
116
1.2
80
No. A1713-2/4
Unit
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
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