VEC2813 Sanyo Semicon Device, VEC2813 Datasheet - Page 2

• Manufacturer Part Number: VEC2813
• Description: N-Channel Silicon MOSFET / Schottky Barrier Diode
• Manufacturer: Sanyo Semicon Device

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Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm (typ)
7012-004
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
8
1
Parameter
7
2
2.9
6 5
0.65
3
4
0.3
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : VEC8
0.15
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Crss
V SD
Ciss
Qgs
Qgd
yfs
Qg
V R
V F
I R
t rr
t r
C
t f
I D =1mA, V GS =0V
V DS =20V, V GS =0V
V GSS = 8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =1.4A
I D =1.5A, V GS =4V
I D =0.7A, V GS =2.5V
I D =0.3A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4V, I D =3A
V DS =10V, V GS =4V, I D =3A
V DS =10V, V GS =4V, I D =3A
I S =3A, V GS =0V
I R =2mA
I F =2A
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
VEC2813
Electrical Connection
Conditions
1
8
7
2
6
3
5
4
min
0.4
3.4
20
30
Ratings
typ
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
Top view
0.85
0.85
0.82
280
5.6
8.8
0.4
51
61
75
60
38
13
35
35
25
75
20
max
0.45
1.25
113
1.3
1.2
No. A0384-2/6
10
66
85
1
Unit
m
m
m
mA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
A
A
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