VEC2822 Sanyo Semicon Device, VEC2822 Datasheet
VEC2822
Related parts for VEC2822
VEC2822 Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2822 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Interterminal Capacitance Reverse Recovery Time Package Dimensions unit : mm (typ) 7012-005 0 0.65 2.9 VEC2822 Symbol Conditions I O Mounted on a ceramic board (1200mm I FSM 50Hz sine wave, 1 cycle Tj Tstg Symbol Conditions V (BR)DSS -1mA =0V I DSS -20V =0V I GSS V GS =± ...
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... Gate-to-Source Voltage VEC2822 t rr Test Circuit [SBD] Duty≤10 --10V -- =5Ω OUT VEC2822 [MOSFET] --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT11954 [MOSFET] Ta=25 ° C --4 --5 --6 --7 --8 --9 --10 IT11827 50Ω 100Ω ...
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... --4 --10V --3.5A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 Ambient Temperature °C VEC2822 fs⏐ [MOSFET --10V --1.0 --10 IT06420 [MOSFET --10V --4. (on --1.0 IT06422 [MOSFET IT13025 [MOSFET] 80 100 ...
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... Average Output Current FSM -- t 14 Current waveform 50Hz sine wave 0. 0.1 Time VEC2822 [SBD] 0.4 0.5 0.6 0.7 IT10276 [SBD] (1) (2) (4) (3) (1)Rectangular wav e θ =60 ° (2)Rectangular wav e θ =120 ° (3)Rectangular wav e θ =180 ° (4)Sine wav e θ =180 ° 1.5 2.0 2.5 ...
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... Note on usage : Since the VEC2822 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...