DST857BDJ Diodes, DST857BDJ Datasheet - Page 2
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DST857BDJ
Manufacturer Part Number
DST857BDJ
Description
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Manufacturer
Diodes
Datasheet
1.DST857BDJ.pdf
(5 pages)
Maximum Ratings
Thermal Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Notes:
DST857BDJ
Document number: DS32037 Rev. 1 - 2
1,000
100
0.1
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
10
1
0.00001
Fig. 2 Single Pulse Maximum Power Dissipation
0.001
0.000001
0.01
0.1
t , PULSE DURATION TIME (s)
1
1
Characteristic
Characteristic
D = 0.05
D = 0.02
D = 0.005
D = Single Pulse
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.01
0.001
@T
0.00001
A
= 25°C unless otherwise specified
0.1
0.0001
R
Duty Cycle, D = t /t
T - T = P * R
R
θJA
J
θ
Single Pulse
JA
(t) = r(t) *
A
= 370°C/W
10
R
θ
0.001
JA
θ
1 2
JA
(t)
Fig. 1 Transient Thermal Response
1,000
t , PULSE DURATION TIME (s)
1
www.diodes.com
D = 0.9
0.01
2 of 5
Symbol
V
V
Symbol
T
V
J
CBO
CEO
EBO
I
R
, T
0.1
C
P
θ JA
D
STG
0.4
0.3
0.2
0.1
0
0
Fig. 3 Power Dissipation vs. Ambient Temperature
20
1
T , AMBIENT TEMPERATURE ( C)
A
40
P(pk)
-55 to +150
10
Value
Duty Cycle, D = t /t
T - T = P * R
-100
Value
R
60
-5.0
-50
-45
J
300
417
θJA
R
Note 3
θ
JA
t
(t) = r(t) *
A
1
t
= 370°C/W
2
80
100
θ
R
JA
100
1 2
θ
JA
(t)
www.DataSheet4U.com
120
1,000
DST857BDJ
°
140
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
V
V
V
January 2010
160