DMBT5401 Dc Components, DMBT5401 Datasheet
DMBT5401
Manufacturer Part Number
DMBT5401
Description
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBT5401.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Designed for general purpose applications requiring
high breakdown voltage.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
(1)
R
DC COMPONENTS CO., LTD.
(1)
DISCRETE SEMICONDUCTORS
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
CEO
EBO
T
STG
I
C
Symbol
V
V
V
V
D
J
BV
BV
BV
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
h
h
h
C
CBO
o
FE1
FE2
FE3
f
CBO
CEO
EBO
T
ob
C)
-55 to +150
Rating
+150
-160
-150
-500
225
-160
-150
Min
100
-5
50
60
50
-5
-
-
-
-
-
-
Typ
Unit
mW
mA
o
o
-
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
C
C
Max
-0.2
-0.5
240
300
-50
-1
-1
6
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
3
nA
pF
V
V
V
V
V
V
V
-
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
I
I
I
V
I
I
I
I
I
I
I
I
V
.063(1.60)
.055(1.40)
C
C
E
C
C
C
C
C
C
C
C
CB
CB
=-10 A
=-100 A
=-1mA
=-10mA, I
=-50mA, I
=-10mA, I
=-50mA, I
=-1mA, V
=-10mA, V
=-50mA, V
=-10mA, V
.051(1.30)
.035(0.90)
Max
=-120V
=-10V, f=1MHz
Test Conditions
.108(0.65)
.089(0.25)
DMBT5401
CE
B
B
B
B
CE
CE
CE
=-1mA
=-5mA
=-1mA
=-5mA
=-5V
=-5V
=-5V
=-10V, f=100MHz
.027(0.67)
.013(0.32)
.0043(0.11)
.0035(0.09)
SOT-23
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