DMBTA56 Dc Components, DMBTA56 Datasheet
DMBTA56
Manufacturer Part Number
DMBTA56
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DMBTA56.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Designed for general purpose amplifier applications.
1 = Base
2 = Emitter
3 = Collector
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
Transition Frequency
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
(T
Symbol
V
V
V
T
A
P
=25
T
CBO
CEO
EBO
STG
I
Symbol
C
D
V
J
BV
BV
V
BV
h
h
I
I
CE(sat)
BE(on)
CBO
CEO
FE1
FE2
o
f
CBO
CEO
EBO
T
C)
-55 to +150
Rating
+150
-500
225
-80
-80
Min
100
-80
-80
-4
50
50
-4
-
-
-
-
Typ
Unit
mW
mA
o
o
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
-0.25
Max
-100
-100
-1.2
-
-
-
-
-
-
1
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.026(0.65)
.010(0.25)
Dimensions in inches and (millimeters)
Unit
MHz
nA
nA
V
V
V
V
V
3
-
-
.020(0.50)
.012(0.30)
2
(0.10)
.045(1.15)
.034(0.85)
.004
I
I
I
V
V
I
I
I
I
I
.063(1.60)
.055(1.40)
C
C
E
C
C
C
C
C
CB
CE
=-100 A
=-100 A
=-1mA
=-100mA, I
=-100mA, V
=-10mA, V
=-100mA, V
=-10mA, V
.051(1.30)
.035(0.90)
Max
Test Conditions
=-80V
=-60V
.108(0.65)
.089(0.25)
DMBTA56
CE
CE
B
CE
CE
=-10mA
.027(0.67)
.013(0.32)
=-1V
=-2V
=-1V
=-1V
.0035(0.09)
.0043(0.11)
SOT-23
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