FMA219 Filtronic Compound Semiconductors, FMA219 Datasheet - Page 3

• Manufacturer Part Number: FMA219
• Description: X-BAND LNA MMIC
• Manufacturer: Filtronic Compound Semiconductors

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T
Note: Measurement Conditions T
YPICAL
Tel: [phone]
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-23.0
-12
-16
-20
24
20
16
12
-4
-8
8
4
0
POWER TRANSFER CHARACTERISTIC
RF PERFORMANCE (V
5
-21.0
M
Pout@7GHz
Pout@9GHz
Pout@11GHz
Comp@7GHz
Comp@9GHz
Comp@11GHz
6
EASURED
-19.0
FMA219BF POWER TRANSFER CHARACTERISTIC
7
FMA219 FREQUENCY RESPONSE
-17.0
8
-15.0
Frequency [GHz]
9
P
Pin (dBm)
10
-13.0
ERFORMANCE
11
Fax: [phone]
-11.0
DD
AMBIENT
12
= +3V, I
-9.0
Specifications subject to change without notice
13
Filtronic Compound Semiconductors Ltd
S21
-7.0
= 22°C unless otherwise stated
14
DD
15
-5.0
O
= I
N
-3.0
OP
W
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
)
AFER
3
:
Email: [e-mail]
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
O u
tp
ut
Po
w e
r
(d
B
m )
Note: Multiple traces show typical die variation
across a 150mm (6") wafer. Effect of typical
bond wire inductances (25µm dia. 1mm
length, 2 each on input and output ports) is
less than a 0.5dB decrease in S21 (@11GHz),
and no measurable effect on noise figure.
Note: Equivalent output IP3 performance
exceeds 24dBm, input IP3 is typically ≥+2dBm.
11.0
7
9.0
7.0
5.0
3.0
1.0
-19.0
-17.0
3
Pout
RD
-ORDER INTERMODULATION
8
Im 3, dB c
IM P RO DU CTS vs. IN PU T PO W ER A T 9.0 GH z
-15.0
FMA219BF NOISE FIGURE
NOISE FIGURE
Input Pow er (dB m )
Frequency (GHz)
-13.0
Website:
9
-11.0
www.filtronic.com
FMA219
10
-9.0
Datasheet v3.0
-7.0
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
IM
Pr
od
uc
ts
(d
B c
)
11