DIM250WHS06-S000 Dynex Semiconductor, DIM250WHS06-S000 Datasheet - Page 2

• Manufacturer Part Number: DIM250WHS06-S000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

DIM250WHS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Baseplate material: Cu
Creepage distance: 24mm
case
2/8
Symbol
Symbol
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
R
R
R
= 25˚C unless stated otherwise
V
V
I
P
V
T
C(PK)
th(c-h)
I
th(j-c)
th(j-c)
I
T
CES
GES
max
-
2
isol
C
stg
t
j
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage - per module
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Al
2
t value
2
O
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
3
Parameter
Clearance:
CTI (Critical Tracking Index): 175
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
case
case
GE
R
= 0, t
= 0V
= 65˚C
= 25˚C, T
case
p
= 10ms, T
= 95˚C
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting - M6
Electrical connections - M6
13mm
j
= 150˚C
Test Conditions
vj
= 125˚C
Test Conditions
-
-
Min.
–40
2.5
3
-
-
-
-
-
www.dynexsemi.com
Typ.
-
-
-
-
-
-
-
-
Max.
1157
Max.
TBD
600
250
500
108
203
150
125
125
2.5
15
20
5
5
˚C/kW
˚C/kW
˚C/kW
Units
Units
kA
Nm
Nm
kV
˚C
˚C
˚C
W
V
V
A
A
2
s