DIM300XCM45-F000 Dynex Semiconductor, DIM300XCM45-F000 Datasheet - Page 4

• Manufacturer Part Number: DIM300XCM45-F000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

DIM300XCM45-F000
ELECTRICAL CHARACTERISTICS
T
T
4/8
Symbol
Symbol
case
case
E
E
t
t
t
t
E
E
E
E
:
d(off)
d(on)
d(off)
d(on)
Q
Q
Q
I
I
OFF
OFF
t
t
t
t
ON
ON
rec
rec
rr
rr
= 25° C unless stated otherwise
= 125° C unless stated otherwise
f
r
f
r
rr
rr
g
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Parameter
Parameter
R
G(ON)
Test Conditions
Test Conditions
dI
dI
= 10 , R
F
F
R
R
V
V
V
V
V
V
/dt =1500A/us
/dt =1500A/us
C
C
L ~ 200nH
L ~ 200nH
CE
G(OFF)
CE
I
G(ON)
I
CE
CE
I
I
C
GE
C
GE
ge
ge
F
F
= 300A
= 300A
=300A
=300A
= 2250V
= 2250V
=2250V
=2250V
= 55nF
= 55nF
= ±15V
= ±15V
= 10
= 22
G(OFF)
= 22
Min
Min
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1350
Typ.
Typ.
250
750
850
220
900
240
350
300
250
850
800
220
430
410
530
5.0
5.2
10
Max
Max
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
A
A
C
C
C
s
s