DIM375WKS06-S000 Dynex Semiconductor, DIM375WKS06-S000 Datasheet - Page 3

• Manufacturer Part Number: DIM375WKS06-S000
• Description: IGBT Chopper Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
Note:
†
L* is the circuit inductance + L
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
case
Measured at the power busbars and not the auxiliary terminals.
Symbol
V
V
= 25˚C unless stated otherwise.
R
CE(sat)
I
I
C
GE(TH)
V
I
L
CES
GES
I
FM
INT
F
F
ies
M
†
†
Collector cut-off current
(IGBT and Diode arm)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
Input capacitance
Module inductance
Internal transistor resistance - per arm
Parameter
M
V
V
V
I
V
V
DC
t
I
I
V
C
p
F
F
GE
GE
GE
GE
GE
CE
= 1ms
= 15mA, V
= 350A
= 350A, T
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
= 25V, V
Test Conditions
CE
CE
C
C
case
GE
GE
= 350A
= 350A, , T
= V
= V
CE
= 0V, f = 1MHz
= V
= 125˚C
= 0V
CES
CES
CE
-
-
, T
case
case
= 125˚C
= 125˚C
DIM375WKS06-S000
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.23
5.5
2.1
2.3
1.5
1.5
40
20
-
-
-
-
-
Max.
375
750
7.5
2.6
2.8
1.8
1.8
10
2
2
-
-
Units
m
mA
mA
nH
nF
V
V
V
A
A
V
V
A
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