DIM600DCM17-A000 Dynex Semiconductor, DIM600DCM17-A000 Datasheet - Page 4

• Manufacturer Part Number: DIM600DCM17-A000
• Description: Igbt Chopper Module
• Manufacturer: Dynex Semiconductor

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DIM600DCM17-A000
ELECTRICAL CHARACTERISTICS
T
case
Note:
†
* L is the circuit inductance + L
4/11
Symbol
Measured at the power busbars and not the auxiliary terminals)
V
V
SC
= 25˚C unless stated otherwise.
CE(sat)
R
I
I
C
C
GE(TH)
V
I
L
CES
GES
I
FM
INT
F
res
F
ies
M
Data
†
†
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Input capacitance
Reverse transfer capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
SC
Parameter
M
V
V
V
I
V
V
DC
t
I
I
V
V
T
t
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
CE
= 1ms
= 600A
= 600A, T
= 125˚C, V
= 30mA, V
10 s, V
= 25V, V
= 25V, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
Test Conditions
CE(max)
CE
CE
CC
C
C
case
GE
GE
GE
= 600A
= 600A, , T
= V
= V
CE
= 1000V,
= V
= 125˚C
= 0V, f = 1MHz
= 0V, f = 1MHz
= V
= 0V
CES
CES
CE
CES
-
-
, T
– L*. di/dt
case
case
= 125˚C
= 125˚C
I
I
1
2
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
2780
2400
Typ.
0.27
5.5
2.7
3.4
2.0
2.0
2.1
2.1
3.8
45
20
-
-
-
-
-
Max.
1200
600
6.5
3.2
4.0
2.3
2.3
2.4
2.4
20
1
4
-
-
-
-
-
-
Units
m
mA
mA
nH
nF
nF
V
V
V
A
A
V
V
V
V
A
A
A