DIM800NSM33-F000 Dynex Semiconductor, DIM800NSM33-F000 Datasheet - Page 2

• Manufacturer Part Number: DIM800NSM33-F000
• Description: Single Switch IGBT Module
• Manufacturer: Dynex Semiconductor

DIM800NSM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Symbol
2/8
Symbol
case
R
R
R
I
V
V
T
P
Q
V
th(c-h)
C(PK)
th(j-c)
th(j-c)
T
:
I
CES
GES
I
stg
max
2
isol
C
PD
j
= 25° C unless stated otherwise
t
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to
heatsink
Junction temperature
Storage temperature range
Screw torque
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage
Partial discharge
2
t value
Parameter
Parameter
AlN
AlSiC
33mm
20mm
350
Continuous dissipation - junction to case
Continuous dissipation - junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
Mounting M6
Electrical connections – M4
Electrical connections – M8
V
T
1ms, T
T
V
Commoned terminals to base plate.
AC RMS,1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0V, t
= 0V
= 90 ° C
= 25 ° C, T
Test Conditions
case
p
= 115 ° C
1
= 10ms, T
= 3500V, V
Test Conditions
j
= 150 ° C
j
2
= 125 ° C
= 2600V, 50Hz RMS
Min Typ. Max Units
-40
www.dynexsemi.com
www.DataSheet4U.com
Max.
3300
1600
10.4
±20
800
320
10
6
150
125
125
12 ° C/kW
24 ° C/kW
10
8
5
2
Units
kA
kW
° C/kW
pC
kV
V
V
A
A
2
Nm
Nm
Nm
° C
° C
° C
s