PN116 Panasonic Semiconductor, PN116 Datasheet

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PN116

Manufacturer Part Number
PN116
Description
Silicon planar type
Manufacturer
Panasonic Semiconductor
Datasheet
Phototransistors
PNA1605F
Silicon planar type
For optical control systems
■ Features
■ Absolute Maximum Ratings T
■ Electrical-Optical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
• High sensitivity
• Wide directivity characteristics, suited for detecting GaAs LEDs:
• Fast response: t
• Side-view type package
Collector-emitter voltage (Base open)
Collector-base voltage (Emitter open)
Emitter-collector voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Photocurrent
Dark current
Peak emission wavelength
Half-power angle
Rise time
Fall time
Collector-emitter saturation voltage
θ = 70° (typ.)
2. * 1: Source: Tungsten (color temperature 2 856 K)
* 2: Switching time measurement circuit
* 2
* 2
Parameter
Parameter
* 1
50 Ω
r
, t
f
Sig. in
= 8 µs (typ.)
(PN116)
* 1
V
R
CC
L
Symbol
Sig. out
V
V
V
V
Symbol
T
T
V
P
I
I
CEO
CBO
ECO
EBO
a
opr
I
C
stg
CE(L)
CE(sat)
C
CEO
λ
= 25°C
θ
t
t
r
f
p
(Input pulse)
(Output pulse)
a
−30 to +100
−25 to +85
= 25°C ± 3°C
Rating
V
V
V
The angle from which photocurrent
becomes 50%
V
I
CE(L)
100
Note) The part number in the parenthesis shows conventional part number.
CE
CE
CE
CC
20
30
10
5
5
SHE00003BED
= 10 V, L = 100 lx
= 10 V
= 10 V
= 10 V, I
= 1 mA, L = 1 000 lx
t
d
Conditions
Unit
mW
t
CE(L)
mA
r
°C
°C
V
V
V
V
= 1 mA, R
t
f
90%
10%
L
= 100 Ω
t
t
t
d
r
f
: Rise time
:
: Delay time
Fall time
1.27
Min
1
0.2
4.5
3.5
±0.15
±0.15
2
3
1.27
0.05
Typ
900
0.8
0.3
70
3-0.45
8
9
LSTFR103-001 Package
0.45
±0.2
±0.2
Max
2.00
0.6
2.1
±0.15
1: Emitter
2: Collector
3: Base
Unit: mm
1.6
0.8
Unit
±0.15
±0.1
mA
µA
nm
µs
µs
V
°
1

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PN116 Summary of contents

Page 1

... Phototransistors PNA1605F (PN116) Silicon planar type For optical control systems ■ Features • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 70° (typ.) • Fast response µs (typ • Side-view type package ■ Absolute Maximum Ratings T ...

Page 2

PNA1605F  120 100 − °C ) Ambient temperature T a  CEO ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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