DXT5401 Dc Components, DXT5401 Datasheet
DXT5401
Manufacturer Part Number
DXT5401
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DXT5401.pdf
(1 pages)
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Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
1 = Base
2 = Collector
3 = Emitter
(1)Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for general purpose applications requiring
high breakdown voltages.
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
o
C ambient temperature unless otherwise specified)
R
(1)
DC COMPONENTS CO., LTD.
DISCRETE SEMICONDUCTORS
(1)
(1)
(T
Symbol
V
V
V
T
A
P
=25
CBO
CEO
EBO
T
STG
I
C
D
J
V
V
Symbol
V
V
BV
BV
BV
o
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
I
I
h
h
h
C)
C
CBO
EBO
FE1
FE2
FE3
f
CBO
CEO
EBO
T
ob
-55 to +150
Rating
+150
-160
-150
-500
-5
1
-160
-150
Min
100
50
60
50
-5
-
-
-
-
-
-
-
Typ
Unit
mA
o
o
W
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
C
C
Max
-0.2
-0.5
240
.167(4.25)
.159(4.05)
-50
-50
.020(0.51)
.014(0.36)
-1
-1
6
-
-
-
-
-
-
MHz
Unit
nA
nA
pF
V
V
V
V
V
V
V
-
-
-
Dimensions in inches and (millimeters)
1
.066(1.70)
.059(1.50)
.120(3.04)
.181(4.60)
.173(4.40)
.117(2.96)
I
I
I
V
V
I
I
I
I
I
I
I
V
V
C
C
E
C
C
C
C
C
C
C
CB
EB
CE
CB
=-10 A
=-100 A
=-1mA
=-10mA, I
=-50mA, I
=-10mA, I
=-50mA, I
=-1mA, V
=-10mA, V
=-50mA, V
2
.060(1.52)
.058(1.48)
=-5V
=-120V
=-10V, f=100MHz, I
=-10V, f=1MHz
Test Conditions
3
CE
B
B
B
B
CE
CE
=-1mA
=-5mA
=-1mA
=-5mA
=-5V
DXT5401
=-5V
=-5V
.102(2.60)
.095(2.40)
.016(0.41)
.014(0.35)
C
SOT-89
=-10mA
.063(1.60)
.055(1.40)
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