DXTB772 Dc Components, DXTB772 Datasheet
DXTB772
Manufacturer Part Number
DXTB772
Description
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Dc Components
Datasheet
1.DXTB772.pdf
(1 pages)
www.DataSheet4U.com
Description
Pinning
Absolute Maximum Ratings
Electrical Characteristics
(Ratings at 25
Classification of h
1 = Base
2 = Collector
3 = Emitter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (pulse)
Total Power Dissipation
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Designed for use in output stage amplifier, voltage
regulator, DC-DC converter and driver.
(1)Single pulse PW=1ms
(2)When tested in free air condition, without heat sinking.
(3)When mounted on a 40x40X1mm ceramic board.
(4)Printed circuit board 2mm thick, collector plating 1cm square or larger.
(5)Pulse Test: Pulse Width 380 s, Duty Cycle 2%.
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Output Capacitance
Range
Rank
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Characteristic
Characteristic
100~200
o
C ambient temperature unless otherwise specified)
Q
R
(5)
DC COMPONENTS CO., LTD.
FE2
(2)
(3)
(4)
160~320
(1)
P
DISCRETE SEMICONDUCTORS
(5)
250~500
(5)
(T
Symbol
V
V
V
T
A
P
P
P
=25
T
E
CBO
CEO
EBO
STG
I
I
C
C
D
D
D
J
Symbol
V
V
BV
BV
BV
o
I
CE(sat)
h
h
C)
I
BE(sat)
C
CBO
EBO
FE1
FE2
f
CBO
CEO
EBO
T
ob
-55 to +150
Rating
+150
-40
-30
1.5
-5
-3
-7
1
2
Min
100
-40
-30
30
-5
-
-
-
-
-
-
Typ
-0.3
160
Unit
80
55
-1
o
o
W
W
W
-
-
-
-
-
-
V
V
V
A
A
C
C
Max
-0.5
500
.167(4.25)
.159(4.05)
.020(0.51)
.014(0.36)
-1
-1
-2
-
-
-
-
-
-
Unit
MHz
pF
V
V
V
V
V
-
-
A
A
Dimensions in inches and (millimeters)
1
.066(1.70)
.059(1.50)
.120(3.04)
.181(4.60)
.173(4.40)
.117(2.96)
I
I
I
V
V
I
I
I
I
I
V
C
C
E
C
C
C
C
C
CB
EB
CB
=-100 A
=-1mA
=-10 A
=-2A, I
=-2A, I
=-20mA, V
=-1A, V
=-100mA, V
2
.060(1.52)
.058(1.48)
=-30V
=-3V
=-10V, f=1MHz
Test Conditions
B
B
CE
=-0.2A
=-0.2A
3
=-2V
CE
DXTB772
CE
=-2V
.102(2.60)
.095(2.40)
=-5V, f=100MHz
.016(0.41)
.014(0.35)
SOT-89
.063(1.60)
.055(1.40)
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