BU4506DZ Philips Semiconductors, BU4506DZ Datasheet - Page 2

• Manufacturer Part Number: BU4506DZ
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
January 1999
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
BV
V
R
V
V
h
h
V
hs
SYMBOL
t
t
V
t
CES
CES
s
f
fr
FE
FE
isol
CEOsust
CEsat
BEsat
F
fr
isol
be
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
PARAMETER
Switching times (16kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
2
CONDITIONS
waveform;
R.H.
CONDITIONS
V
V
T
I
I
L = 25 mH
V
I
I
I
I
I
CONDITIONS
I
I
V
B
B
C
C
C
C
F
Csat
F
j
BE
BE
EB
F
= 600 mA
= 0 A; I
= 3.0 A
= 3 A; dI
= 3.0 A; I
= 3.0 A; I
= 0.5 A; V
= 3A; V
= 125 ˚C
65% ; clean and dustfree
= 5 V
= 0 V; V
= 0 V; V
= 6 V
= 3.0 A; I
2
C
CE
F
= 100 mA;
B
B
/dt = 50 A/ s
CE
CE
CE
= 5 V
= 0.75 A
= 0.75 A
B1
= V
= V
= 5 V
= 0.6 A; (I
CESMmax
CESMmax
;
B2
= -1.5 A)
MIN.
MIN.
800
7.5
0.8
4.2
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.89
1.55
300
400
5.5
3.7
10
30
19
7
-
-
-
-
Product specification
BU4506DZ
MAX.
MAX.
MAX.
2500
0.98
400
1.0
2.0
3.0
7.3
1.9
4.5
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
mA
mA
pF
ns
ns
V
V
V
V
V
V
V
s