2PB710A Philips Semiconductors, 2PB710A Datasheet - Page 3

• Manufacturer Part Number: 2PB710A
• Description: PNP general purpose transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 May 31
R
I
I
h
V
V
C
f
SYMBOL
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
th j-a
c
PNP general purpose transistor
= 25 C unless otherwise specified.
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
transition frequency
thermal resistance from junction to ambient
2PB710AQ
2PB710AR
2PB710AS
2PB710AQ
2PB710AR
2PB710AS
p
300 s;
PARAMETER
0.02.
PARAMETER
I
I
I
I
I
I
I
I
f = 100 MHz; note 1
E
E
C
C
C
C
C
E
C
= 0; V
= 0; V
= 0; V
= 150 mA; V
= 500 mA; V
= 300 mA; I
= 300 mA; I
= i
= 50 mA; V
e
= 0; V
CB
CB
EB
3
= 60 V
= 60 V; T
= 5 V
CONDITIONS
CB
CE
B
B
= 10 V; f = 1 MHz
CE
CE
= 30 mA; note 1
= 30 mA; note 1
= 10 V;
note 1
= 10 V; note 1
= 10 V; note 1
CONDITIONS
j
= 150 C
85
120
170
40
100
120
140
MIN.
VALUE
500
Product specification
170
240
340
15
10
5
10
600
1.5
MAX.
2PB710A
UNIT
K/W
nA
nA
mV
V
pF
MHz
MHz
MHz
A
UNIT