BCP55-10 Philips Semiconductors, BCP55-10 Datasheet - Page 3

• Manufacturer Part Number: BCP55-10
• Description: NPN medium power transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Apr 08
R
R
I
I
h
h
V
V
f
SYMBOL
SYMBOL
h
-----------
h
amb
CBO
EBO
T
FE
FE
CEsat
BE
th j-a
th j-s
NPN medium power transistors
FE1
FE2
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
BCP55-10; 56-10
BCP54-16; 55-16; 56-16
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
C
I
C
= 0; V
= 0; V
= 0; V
= 5 mA; V
= 150 mA; V
= 500 mA; V
= 150 mA; V
= 0.5 A; I
= 0.5 A; V
= 10 mA; V
= 150 mA; V
CB
CB
EB
3
CONDITIONS
= 30 V
= 30 V; T
= 5 V
B
CE
CE
= 50 mA
CE
note 1
CE
CE
CE
= 2 V
= 2 V
= 5 V; f = 100 MHz
= 2 V
= 2 V
= 2 V
CE
CONDITIONS
j
= 125 C
= 2 V
BCP54; BCP55; BCP56
25
63
25
63
100
MIN.
VALUE
94
13
130
TYP.
Product specification
100
10
100
250
160
250
500
1
1.6
MAX.
2
.
UNIT
K/W
K/W
nA
nA
mV
V
MHz
UNIT
A