BD737 Inchange Semiconductor, BD737 Datasheet - Page 2

• Manufacturer Part Number: BD737
• Description: Silicon NPN Power Transistor
• Manufacturer: Inchange Semiconductor

INCHANGE Semiconductor
isc
ELECTRICAL CHARACTERISTICS
T
isc Website：www.iscsemi.cn
SYMBOL
C
V
V
V
V
V
=25℃ unless otherwise specified
(BR)CEO
(BR)CBO
(BR)EBO
CE(
h
h
I
BE(
CES
FE-1
FE-2
sat
on
Silicon NPN Power Transistor
)
)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
DC Current Gain
DC Current Gain
PARAMETER
I
I
I
I
I
V
I
I
C
C
E
C
C
C
C
CE
= 30mA; I
= 0.1mA; I
= 1mA; I
= 2A; I
= 2A; V
= 20mA; V
= 2A; V
= 45V; V
2
B
CE
CE
= 0.2A
B
C
= 0
= 1V
= 1V
B
CONDITIONS
E
BE
CE
= 0
= 0
= 0
= 4V
isc
Product Specification
MIN
45
45
40
40
5
www.DataSheet4U.com
MAX
0.6
1.1
0.2
BD737
UNIT
mA
V
V
V
V
V