BD738 Inchange Semiconductor, BD738 Datasheet
BD738
Manufacturer Part Number
BD738
Description
Silicon PNP Power Transistor
Manufacturer
Inchange Semiconductor
Datasheet
1.BD738.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·DC Current Gain -
·Collector-Emitter Breakdown Voltage-
·Complement to Type BD737
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: h
: V
V
V
V
T
I
P
T
CBO
CEO
I
CM
EBO
I
stg
C
B
FE
C
J
(BR)CEO
B
Silicon PNP Power Transistor
= 40(Min.)@ I
= -45V(Min.)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
a
C
=25℃
=25℃
C
PARAMETER
= -
20mA
a
=25
℃)
-55~150
VALUE
150
-45
-45
40
-5
-7
-4
-1
2
UNIT
℃
℃
W
V
V
V
A
A
A
isc
Product Specification
www.DataSheet4U.com
BD738
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BD738 Summary of contents
Page 1
... Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn ℃) =25 a VALUE UNIT - ℃ 150 ℃ -55~150 isc Product Specification BD738 www.DataSheet4U.com ...
Page 2
... Website：www.iscsemi.cn isc Product Specification CONDITIONS I = -30mA -0.1mA -1mA -2A -0. -2A - -45V -20mA - -2A - BD738 www.DataSheet4U.com MIN MAX UNIT - -0.6 V -1 ...