BUX98 STMicroelectronics, BUX98 Datasheet - Page 2

• Manufacturer Part Number: BUX98
• Description: HIGH POWER NPN SILICON TRANSISTORS
• Manufacturer: STMicroelectronics

BUX98 / BUX98A
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
V
Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %
V
V
Symbol
R
CEO(sus)
CER(sus)
CE(sat)
BE(sat)
thj-case
I
I
I
I
CEO
CER
CES
EBO
t
t
t
t
on
t
on
t
s
s
f
f
Thermal Resistance Junction-case
Collector Cut-off
Current (R
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Turn-on Time
Storage Time
Fall Time
Turn-on Time
Storage Time
Fall Time
C
= 0)
Parameter
B
BE
BE
= 0)
= 0 )
= 10
)
V
V
V
V
V
V
I
for BUX98
for BUX98A
L = 2mH
for BUX98
for BUX98A
for BUX98
I
for BUX98A
I
I
for BUX98
I
for BUX98A
I
for BUX98
V
I
for BUX98A
V
I
C
C
C
C
C
C
B1
B1
CE
CE
CE
CE
CE
EB
CC
CC
= 200 mA
= 20 A
= 16 A
= 24 A
= 20 A
= 16 A
= - I
= - I
= 5 V
= V
= V
= V
= V
= V
= 150 V
= 150 V
case
B2
B2
CES
CES
CES
CES
CEO
= 25
Test Conditions
= 4 A
= 3.2 A
o
C unless otherwise specified)
T
T
I
I
I
I
I
I
I
CASE
CASE
I
C
C
C
B
B
B
B
B
= 20 A
= 16 A
= 4 A
= 3.2 A
= 5 A
= 4 A
= 3.2 A
= 1 A
= 125
= 125
Max
o
o
C
C
1000
Min.
400
450
850
Typ.
0.7
Max.
400
1.5
1.5
1.6
1.6
0.8
0.8
1
8
4
2
2
5
1
3
1
3
o
Unit
mA
mA
mA
mA
C/W
V
V
V
V
V
V
V
V
V
A
A
s
s
s
s
s
s